Advanced Zinc Anode with Nitrogen‐Doping Interface Induced by Plasma . . . Herein, we introduced a plasma technique, for the first time, to form a nitrogen (N)-doped interface on a Zn metal anode (denoted as N-Zn) for high stability ZIBs The N 2 plasma can effectively produce deep nitrogen doping in bare Zn metal via the high-energy-ionized nitrogen gas bombardment
Advanced Zinc Anode with Nitrogen‐Doping Interface Induced by Plasma . . . Herein, we introduced a plasma technique, for the first time, to form a nitrogen (N)‐doped interface on a Zn metal anode (denoted as N‐Zn) for high stability ZIBs The N 2 plasma can effectively produce deep nitrogen doping in bare Zn metal via the high‐energy‐ionized nitrogen gas bombardment
Advanced Zinc Anode with Nitrogen-Doping Interface Induced . . . However, formation of Zn dendrites and continuous side reactions during cycling result in serious instability problems for ZIBs In this work, the authors develop a facile and versatile plasma-induced nitrogen-doped Zn (N-Zn) foil for dendrite-free Zn metal anode
Advanced Zinc Anode with Nitrogen‐Doping Interface Induced by Plasma . . . Overall, this work offers new fundamental insights into homogenizing Zn electrodeposition processes by pre-introduced active nucleation sites and provides a novel direction of interface design engineering for ultra-stable Zn metal anode
Advanced Zinc Anode with Nitrogen‐Doping Interface Induced by Plasma . . . A plasma technique is introduced to form an N‐doped interface on the Zn metal anode for high stability ZIBs The plasma‐induced N‐doped Zn electrode can form uniform active sites for guiding a homogenized electrodeposition process and effectively reduce the Zn ion diffusion barrier